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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1992.11.25 Revised Date : 2001.06.29 Page No. : 1/2 HML1225/HXL1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HML1225/HXL1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. Absolute Maximum Ratings (Ta=25C) Parameter Repetitive Peak Off State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature Part No. HXL1225 HML1225 Symbol VDRM VDRM IT(rms) IT(AV) VGRM IGM PG(AV) Tj Tstg Tsld Min 380 300 0.8 0.5 8 1 0.1 -40 -40 Max 125 125 250 Unit Test Conditions V Tj=40C to 125C (RGK=1K) V A TC=40C A Half Cycle=180,TC=40C V A W C C C IGR=10uA 10us max 20ms max 1.6mm from case 10s max Classification Of IGT Rank HML1225 HXL1225 AA 10-18 uA 10-18 uA AB 12-23 uA 12-23 uA AC 17-28 uA 17-28 uA AD 22-55 uA 22-55 uA B 45-105 uA 45-105 uA C 95-155 uA Electrical Characteristics (Ta=25C) Parameter Off-State Leakage Current Off-State Leakage Current On-State Voltage On-State Threshold Voltage On-State Slops Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Crtical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-off Time Thermal Resistance junc.to case Thermal Resistance junc. to amb HML1225, HXL1225 Symbol Min Max Unit Test Conditions IDRM 0.1 mA @VDRM (RGK=1K), Tj=125C IDRM 5 uA @VDRM (RGK=1K), Tj=25C 1.4 V at IT=0.4A, Tj=25C VT 2.2 V at IT=0.8A, Tj=25C VT(TO) 0.95 V Tj=125C rT 600 Ohm Tj=125C IGT 200 uA VD=7V VGT 0.8 V VD=7V IH 5 mA RGK=1K(ohm) IL 6 mA RGK=1K(ohm) dv/dt 25 V/us VD=0.67*VDRM(RGK=1K), Tj=125C di/dt 30 A/us IG=10mA,diG/dt=0.1A/us, Tj=125C tgd 500 ns IG=10mA,diG/dt=0.1A/us Tc=85C,VD=0.67*VDRM tg 200 us VR=35V,IT=IT(AV) 100 K/W Rjc K/W Rja 200 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : Preliminary Data Issued Date : 1992.11.25 Revised Date : 2001.06.29 Page No. : 2/2 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Cathode 2.Gate 3. Anode 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HML1225, HXL1225 HSMC Product Specification |
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